di gital transistors (built-in resistors) UMC4N digital transistor (npn+pnp) features dtc144e and dta114y transistors are built-in a package marking: c4 npn dtc144e absolute maximum ratings (t a =25 ) electrical characteristics (t a =25 ) parameter sy m bol min. ty p max. unit conditions v i(off) 0.5 v cc =5v ,i o =100 a input voltage v i(on) 3 v v o =0.3v ,i o =2ma output voltage v o(on) 0.3 v i o /i i =10ma/0.5ma input current i i 0.18 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 68 v o =5v,i o =5ma input resistance r 1 32.9 47 61.1 k ? resistance ratio r 2 /r 1 0.8 1 1.2 transition frequency f t 250 mhz v ce =10v ,i e =-5ma,f=100mhz pnp dta114y absolute maximum ratings (t a =25 ) electrical characteristics (t a =25 ) parameter sy mbol min. typ max. unit conditions v i(off) -0.3 v cc =-5v ,i o =-100 a input voltage v i(on) -1.4 v v o =-0.3v ,i o =-1ma output voltage v o(on) -0.3 v i o /i i =-5ma/-0.25ma input current i i -0.88 ma v i =-5v output current i o(off) -0.5 a v cc =-50v, v i =0 dc current gain g i 68 v o =-5v,i o =-5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 3.7 4.7 5.7 transition frequency f t 250 mhz v ce =-10v ,i e =5ma,f=100mhz parameter symbol value unit supply voltage v cc 50 v input voltage v in -10~40 v i o 100 output current i c(max) 100 ma power dissipation p c 150 mw junction temperature tj 150 storage temperature tstg -55~150 parameter symbol value unit supply voltage v cc -50 v input voltage v in -40~ +6 v i o -70 output current i c(max) -100 ma power dissipation p c 150 mw junction temperature tj 150 storage temperature tstg -55~150 sot-353 1 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,nov,2012
0.1 1 10 0.1 1 10 100 110 10 100 1000 0.1 1 10 100 1 10 100 1000 0 5 10 15 20 0 2 4 6 8 0 25 50 75 100 125 150 0 50 100 150 200 0.0 0.4 0.8 1.2 1.6 2.0 1e-3 0.01 0.1 1 off characteristics 30 3 0.3 on characteristics t a =25 t a =100 v o =0.3v 3 0.3 30 output current i o (ma) input voltage v i(on) (v) 50 i o i o 30 300 30 3 0.5 v o(on) ?? t a =25 t a =100 i o /i i =20 output voltage v o(on) (mv) output current i o (ma) UMC4N dtr1 30 t a =25 t a =100 v o =5v 300 3 3 0.3 30 g i ?? output current i o (ma) dc current gain g i v r f=1mhz t a =25 c o ?? capacitance c o (pf) reverse bias voltage v r (v) t a p d ?? power dissipation p d (mw) ambient temperature t a ( ) t a =100 t a =25 0.3 0.03 3e-3 v cc =5v output current i o (ma) input voltage v i(off) (v) 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,nov,2012
-0.1 -1 -10 -100 -0.1 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -1.6 -0.01 -0.1 -1 -10 -1 -10 -100 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 -0 -4 -8 -12 -16 -20 0 1 2 3 4 5 -1 -10 -100 -10 -100 -1000 on characteristics t a =25 t a =100 v o =-0.3v -3 -0.3 -30 output current i o (ma) input voltage v i(on) (v) dtr2 UMC4N off characteristics t a =100 t a =25 v cc =-5v output current i o (ma) input voltage v i(off) (v) t a =25 t a =100 v o =-5v g i ?? i o output current i o (ma) dc current gain g i p d ?? t a power dissipation p d (mw) ambient temperature t a ( ) f=1mhz t a =25 c o ?? v r output capacitance c o (pf) reverse bias voltage v r (v) -300 -30 v o(on) ?? i o t a =25 t a =100 i o /i i =20 output voltage v o(on) (mv) output current i o (ma) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,nov,2012
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